HOOD
Product Introduction
Used for 6'' SiC epitaxial growth and protection of reaction chambers
Applicable Equipment
6'' SiC Epitaxial Vertical Reactor System
Product Specifications
Substrate：Isostatic graphite（purity>6N）
Coating：β-SiC（thickness=100±10 μm）
Features：High compactness, high temperature and corrosion resistance, strong coating adhesion, long lifetime
Product Category
SiC Epitaxy
Keywords
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Substrate：Si（purity>6N）
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Product Inquiry
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Service Hotline
Email: sales@lh-csm.com
Address: 204-013, Building Q01, Changsha Zhigu Industrial Park, No. 116, Huizhi North Road, Dongfanghong Street, Xiangjiang New Area, Changsha City, Hunan, China
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