TaC Ring
Product Introduction
Used for the growth of 6''&8'' SiC crystals to reduce crystal defects in the ingots
Applicable Equipment
Gen.3 Semiconductor SiC Crystal Growth Equipment
Product Specifications
Substrate：Isostatic graphite（purity>6N）
Coating：TaC（thickness=30~50 μm）
Features：High compactness, high temperature and corrosion resistance(<2600℃), strong coating adhesion, long lifetime
Product Category
SiC Crystal Growth
Keywords
Recommended Products
Substrate：CVD SiC（purity>6N）
Features：High Purity, corrosion resistance, high strength, stable chemical properties
Substrate：Si（purity>6N）
Features：High Purity, corrosion resistance, high strength, stable chemical properties
Product Inquiry
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Service Hotline
Email: sales@lh-csm.com
Address: 204-013, Building Q01, Changsha Zhigu Industrial Park, No. 116, Huizhi North Road, Dongfanghong Street, Xiangjiang New Area, Changsha City, Hunan, China
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