8'' DR Wafer Supp（TaC）
Product Introduction
SiC Substrate Holder for Epitaxial Growth, TaC coating
Applicable Equipment
6''&8'' SiC Epitaxial Horizontal Reactors
Product Specifications
Substrate：Isostatic graphite（purity>6N）
Coating：TaC（thickness=30~50 μm）
Features：High compactness, high temperature and corrosion resistance(<2600℃), strong coating adhesion, long lifetime
Product Category
SiC Epitaxy
Keywords
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Product Inquiry
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