8'' DR Wafer Supp
Product Introduction
SiC Substrate Holder for Epitaxial Growth
Applicable Equipment
6''&8'' SiC Epitaxial Horizontal Reactors
Product Specifications
Substrate：Isostatic graphite（purity>6N）
Features：High purity, excellent thermal uniformity, long lifetime
Product Category
SiC Epitaxy
Keywords
Previous page
Previous page
Recommended Products
Substrate：CVD SiC（purity>6N）
Features：High Purity, corrosion resistance, high strength, stable chemical properties
Substrate：Si（purity>6N）
Features：High Purity, corrosion resistance, high strength, stable chemical properties
Product Inquiry
Please contact us—CSM is here to provide you with expert, customized services.
Service Hotline
Email: sales@lh-csm.com
Address: 204-013, Building Q01, Changsha Zhigu Industrial Park, No. 116, Huizhi North Road, Dongfanghong Street, Xiangjiang New Area, Changsha City, Hunan, China
Copyright © Hunan Combination Semiconductor Technology co. , Ltd.
This site supports IPv4 IPv6 .