Bottom Half Moon
Product Introduction
Connecting the quartz tube allows gas to be introduced, driving the Rotating Disk to rotate while enabling precise temperature control. It can be assembled with Upper Half Moon&Cover to form a SiC Epitaxy chamber.
Applicable Equipment
6''&8'' SiC Epitaxial Horizontal Reactors
Product Specifications
Substrate：Isostatic graphite（purity>6N）
Features：High purity, excellent thermal uniformity, long lifetime
Product Category
SiC Epitaxy
Keywords
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Product Inquiry
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Address: 204-013, Building Q01, Changsha Zhigu Industrial Park, No. 116, Huizhi North Road, Dongfanghong Street, Xiangjiang New Area, Changsha City, Hunan, China
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